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| 2SK1969-01 FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,017 50A 125W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 50 200 20 125 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=50A VGS=10V RGS=25 Tch=25C L = 100H Min. 60 1,0 Typ. 1,5 Max. 2,0 500 1,0 10,0 0,027 0,017 3900 1500 950 30 320 780 630 50 200 2,18 120 20 0,019 0,013 40 2600 1000 630 20 210 520 420 50 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 1,45 85 0,16 Unit V V A mA A S pF pF pF ns ns ns ns A A A V ns C Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 1,0 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 60V 0,017 50A 2SK1969-01 FAP-IIIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 125W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 44 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Zth(ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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